6558 Search results for: „“
Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations
Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence...
PublicationsThe importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge
In the present work, we have prepared Mn-doped Ge using different annealing approaches after Mn ion implantation, and obtained samples with hole concentrations ranging from 1018 to 2.1 × 1020 cm−3,...
PublicationsRectifying filamentary resistive switching in ion-exfoliated LiNbO3 thin films
In this letter, we report the resistive switching properties of ion-exfoliated LiNbO3 thin films. After annealing in Ar or in vacuum, electro-forming has been observed on the thin films, and the oxygen...
PublicationsReduced leakage current in BiFeO3 thin films with rectifying contacts
BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism...
PublicationsDefects in hydrothermally grown bulk ZnO
Hydrothermally grown bulk ZnO _Tokyo Denpa_ was investigated using junction-capacitance spectroscopy on silver oxide Schottky contacts (barrier height of 1.20 eV, ideality factor of 1.04). Two main shallow...
PublicationsPseudopotential band structures of rocksalt MgO, ZnO, and Mg1-xZnxO
The electronic properties of the rocksalt group-II oxides MgO and ZnO are investigated by means of the empirical pseudopotential method. Using a simple empty core model potential and experimentally known...
PublicationsDeep acceptor states in ZnO single crystals
The authors report the observation of both acceptor- and donorlike defects in ZnO by deep level transient spectroscopy. The observation is facilitated by using a p-n junction allowing the injection of...
PublicationsRoom temperature ferromagnetism in Mn-doped ZnO films mediated by acceptor defects
Mn-doped ZnO films with preferred c-axis growth orientation were prepared by pulsed laser deposition under N2 atmosphere on a-plane sapphire substrates. Large positive magnetoresistance amounting to 60%...
PublicationsRoom temperature ferromagnetism in carbon-implanted ZnO
Unexpected ferromagnetism has been observed in carbon doped ZnO films grown by pulsed laser deposition [H. Pan et al., Phys. Rev. Lett. 99, 127201 (2007)]. In this letter, we introduce carbon into ZnO...
PublicationsRoom temperature ferromagnetism in ZnO films due to defects
ZnO films were prepared by pulsed laser deposition on a-plane sapphire substrates under N2 atmosphere. Ferromagnetic loops were obtained with the superconducting quantum interference device at room temperature,...
Publications