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Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt
Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively....
PublicationsUnraveling carrier’s kinetics in tuning the ferromagnetism of transparent Zn0.95Co0.05O epitaxial films
The search of transparent conducting and ferromagnetic properties in Zn1_xCoxO based diluted magnetic semiconductor is explored either by chemically alloying the different concentration (x) of Co or by...
PublicationsProbing defect driven tunable spontaneous magnetization in paramagnetic Zn0.95Co0.05O epitaxial films by X-ray absorption investigations
In order to address existing unresolved issues related to intrinsic and extrinsic origins of ferromagnetism in Zn1_xCoxO based diluted magnetic semiconductors for varying x, the present work aims to investigate...
PublicationsDirect evidence of defect coordination and magnetic interaction in local structure of wurtzite type Zn1-xCoxO thin films
The local structure of as deposited and post treated Zn0.95Co0.05O films is investigated to understand the origin of their paramagnetic and tunable ferromagnetic properties for scientific advancements...
PublicationsMagnetic properties of ZnO nanopowders
We report the magnetic characterization of ZnO nanopowders with an average grain size of about 50nm prepared by sol–gel method. At room temperature, ZnO nanopowders exhibit diamagnetism like bulk ZnO....
PublicationsElectrical Control of Magnetoresistance in Highly Insulating Co-Doped ZnO
A Zn0:96Co0:04O film with low electron concentration (about 1:5 _ 1017 cm_3 at 21 K) on a highly conducting Zn0:99Al0:01O layer has been deposited on a-plane sapphire substrate by pulsed laser deposition....
PublicationsPersistent Current Reduction in Metal-Semiconductor FETs With a ZnCoO Channel in an External Magnetic Field
Transparent metal-semiconductor field-effect transistors (MESFETs) with a ZnCoO channel have been fabricated by pulsed laser deposition on c-plane sapphire substrates at a temperature of 550 °C. The paramagnetic...
PublicationsNonvolatile Multilevel Resistive Switching in Ar+ Irradiated BiFeO3 Thin Films
Low-energy Ar+ ion irradiation has been applied to an Au/BiFeO3/Pt capacitor structure before deposition of the Au top electrode. The irradiated thin film exhibits multilevel resistive switching (RS) without...
PublicationsSingle pairing spike-timing dependent plasticity in BiFeO3 memristors with a time window of 25 ms to 125 mu s
Memristive devices are popular among neuromorphic engineers for their ability to emulate forms of spike-driven synaptic plasticity by applying specific voltage and current waveforms at their two terminals....
PublicationsPlasticity in memristive devices for spiking neural networks
Memristive devices present a new device technology allowing for the realization of compact non-volatile memories. Some of them are already in the process of industrialization. Additionally, they exhibit...
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