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Transport properties of Ar+ irradiated resistive switching BiFeO3 thin films
BiFeO3thin films were irradiated by Ar+ ions with different fluences. The rectifying and resistive switching behaviour were retained on the Au/BiFeO3/Pt stack, and the ON/OFF ratio clearly depends on the...
PublicationsKelvin probe force microscopy for characterizing doped semiconductors for future sensor applications in nano- and biotechnology
Kelvin probe force microscopy (KPFM) is one of the most promising non-contact electrical nanometrology techniques to characterize doped semiconductors. By applying a recently introduced explanation of...
PublicationsThe Fe/ZnO(0001) interface: Formation and thermal stability
The room temperature growth mode and the interface reaction of Fe films on single crystalline ZnO(0 0 0 1) substrates prepared in ultra high vacuum (UHV) has been investigated by means of X-ray photoelectron...
PublicationsPhotocapacitive light sensor based on metal-YMnO3-insulator-semiconductor structures
Technology of light sensors, due to the wide range of applications, is a dynamically developing branch of both science and industry. This work presents concept of photodetectors based on a metal-ferroelectric-insulator-semiconductor,...
PublicationsMeyer-Neldel rule in ZnO
Seventy years ago Meyer and Neldel investigated four polycrystalline n-type conducting ZnO rods [W. Meyer and H. Neldel, Z. Tech. Phys. (Leipzig) 12, 588 (1937)]. The specific conductivity increased exponentially...
PublicationsHysteretic anomalous Hall effect in a ferromagnetic, Mn-rich Ge:Mn nanonet
Ferromagnetic Ge:Mn has been fabricated by Mn implantation in intrinsic Ge wafers and by pulsed laser annealing with a pulse duration of 300 ns. Due to a segregation instability during laser annealing,...
PublicationsSpectroscopic ellipsometric studies of InAs monolayers embedded in GaAs
Ellipsometric measurements of metalorganic vapor phase epitaxially grown InAs monolayers (0.5–2.0 ML) in GaAs were made at room temperature in the spectral range of the GaAs fundamental energy gap (hv=51.3–...
PublicationsCo location and valence state determination in ferromagnetic ZnO : Co thin films by atom-location-by-channeling-enhanced-microanalysis electron energy-loss spectroscopy
The Co valence state and the location of Co dopant atoms in ZnO:Co thin films revealing anomalous Hall effect below 50 K have been determined by electron energy-loss spectroscopy (EELS) measurements and...
PublicationsFerromagnetic structurally disordered ZnO implanted with Co ions
We present superparamagnetic clusters of structurally highly disordered Co–Zn–O created by high fluence Co ion implantation into ZnO _0001_ single crystals at low temperatures. This secondary phase...
PublicationsMemory effect of Mn5Ge3 nanomagnets embedded inside a Mn-diluted Ge matrix
Crystalline Mn5Ge3 nanomagnets are formed inside a Mn-diluted Ge matrix using Mn ion implantation. A temperature-dependent memory effect and slow magnetic relaxation are observed below the superparamagnetic...
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