6558 Search results for: „“
The influence of annealing on manganese implanted GaAs films
Besides low-temperature molecular beam epitaxy, ion implantation provides an alternative route to incorporate Mn into GaAs above the equilibrium solubility limit. Recently, Mn implanted GaAs diluted magnetic...
PublicationsBipolar resistive switching in YMnO3/Nb: SrTiO3 pn-heterojunctions
Resistively switching oxides are promising materials for use in electronic applications such as nonvolatile memories, logic gates, and artificial synapses. This work presents the bipolar resistive switching...
PublicationsIon beam-induced shaping of Ni nanoparticles embedded in a silica matrix: from spherical to prolate shape
Present work reports the elongation of spherical Ni nanoparticles (NPs) parallel to each other, due to bombardment with 120 MeV Au+9 ions at a fluence of 5 × 1013 ions/cm2. The Ni NPs embedded in silica...
Publicationsn-InAs Nanopyramids Fully Integrated into Silicon
InAs with an extremely high electron mobility (up to 40 000 cm2/V s) seems to be the most suitable candidate for better electronic devices performance. Here we present a synthesis of inverted crystalline...
PublicationsGrowth and characterization of Mn- and Co-doped ZnO nanowires
We report on the high-pressure pulsed laser deposition growth of zinc oxide nanowires containing about 0.2 at.% Co and 0.5 at.% Mn by NiO and Au catalyst. Scanning electron microscopy and X-ray diffraction...
PublicationsInterband transitions in [001]-(GaP)(1)(InP)(m) superlattices
We study the optical interband transitions of [001]-(GaP)1(InP)m monolayer superlattices on (001) InP for m=5, 14, 27 and 51 using spectroscopic ellipsometry for photon energies from 1 to 6 eV. Samples...
PublicationsMn-doped Ge and Si:A Review of the Experimental Status
Diluted ferromagnetic semiconductors (FMS) are in the focus of intense research due to their potential applications in spintronics and their striking new physical properties. So far Mn-doped III-V compound...
PublicationsIntensity of optical absorption close to the band edge in strained ZnO films
Besides other one of the remarkable properties making wurtzite ZnO such an interesting material is its large exciton binding energy of about 60 meV, leading to stable excitons at room-temperature. Also,...
PublicationsHomoepitaxial ZnO Thin Films Fabricated by Using Pulsed-Laser Deposition
ZnO thin films were deposited homoepitaxially by using pulsed-laser deposition on ZnO wafers grown by using the hydrothermal method. The dominant shallow donor level in the nominally undoped thin films...
PublicationsVacuum ultraviolet dielectric function and band structure of ZnO
For ZnO, the optical dielectric functions for polarizations parallel and perpendicular to the optical axis were determined in the photon energy range from 4.0 to 9.5 eV by using generalized spectroscopic...
Publications