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Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes
BiFeO3 based MIM structures with Ti-implanted Pt bottom electrodes and Au top electrodes have been fabricated on Sapphire substrates. The resulting metal-insulator-metal (MIM) structures show bipolar resistive...
PublicationsKey concepts behind forming-free resistive switching incorporated with rectifying transport properties
This work reports the effect of Ti diffusion on the bipolar resistive switching in Au/BiFeO3/Pt/Ti capacitor-like structures. Polycrystalline BiFeO3 thin films are deposited by pulsed laser deposition...
PublicationsPractical guide for validated memristance measurements
Chua [IEEE Trans. Circuit Theory 18, 507–519 (1971)] predicted rather simple charge-flux curves for active and passive memristors (short for memory resistors) and presented active memristor circuit realizations...
PublicationsVector-magneto-optical generalized ellipsometry
We present the setup of a variable-angle vector-magneto-optical generalized ellipsometer (VMOGE) in the spectral range from 300 to 1100 nm using an octupole magnet, and demonstrate VMOGE measurements of...
PublicationsAnionic and cationic substitution in ZnO
In this contribution we review the impact of anionic and cationic substitutions on the electronic properties of bulk ZnO crystals, thin films and ZnO powders. p-type doping is discussed with focus on the...
PublicationsFerromagnetic behavior in Zn(Mn, P)O thin films
We present magnetic properties of Zn(Mn, P)O thin films, with 5 at% Mn, epitaxially grown by pulsed laser deposition in oxygen atmosphere on a-plane sapphire substrates. Ferromagnetism above room temperature...
PublicationsMagnetic characterization of Bi(Fe1-xMnx)O-3
Bi(Fe1−xMnx)O3 ceramics (x up to 0.3) were prepared by rapid sintering. Weak ferromagnetism with two magnetic anomalies at low temperatures was observed for Bi(Fe0.95Mn0.05)O3 and Bi(Fe0.9Mn0.1)O3. From...
PublicationsSpin manipulation in Co-doped ZnO
We report the clearly observed tunneling magnetoresistance at 5 K in magnetic tunnel junctions with Co-doped ZnO as a bottom ferromagnetic electrode and Co as a top ferromagnetic electrode prepared by...
PublicationsOrigin of carrier localization on two-dimensional GaN substitution layers embedded in GaAs
The electronic properties of GaAs containing a two-dimensional GaN substitution layer are studied by means of the empirical pseudopotential method in a periodic modeling approach. These are found to be...
PublicationsBand-gap narrowing in Mn-doped GaAs probed by room-temperature photoluminescence
The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing...
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