Room temperature ferromagnetism in ZnO films due to defects

in: Applied Physics Letters (2008)
Xu, Qingyu; Schmidt, Heidemarie; Zhou, Shengqiang; Potzger, Kay; Helm, Manfred; Hochmuth, Holger; Lorenz, Michael; Setzer, Annette; Esquinazi, Pablo; Meinecke, Christoph; Grundmann, Marius
ZnO films were prepared by pulsed laser deposition on a-plane sapphire substrates under N2 atmosphere. Ferromagnetic loops were obtained with the superconducting quantum interference device at room temperature, which indicate a Curie temperature much above room temperature. No clear ferromagnetism was observed in intentionally Cu-doped ZnO films. This excludes that Cu doping into ZnO plays a key role in tuning the ferromagnetism in ZnO. 8.8% negative magnetoresistance probed at 5 K at 60 kOe on ferromagnetic ZnO proves the lack of s-d exchange interaction. Anomalous Hall effect _AHE_ was observed in ferromagnetic ZnO as well as in nonferromagnetic Cu-doped ZnO films, indicating that AHE does not uniquely prove ferromagnetism. The observed ferromagnetism in ZnO is attributed to intrinsic defects.

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