Probing the strength of light-matter interaction in semiconductor microcavities by using resonant-mode shifts in temperature-dependent photoluminescence spectra

in: APL Materials (2023)
Wu, Sheng-Chan; Yang, Chung-Xian; Huang, Jer-Shing; Chang, Yia-Chung; Chien, Ching-Hang; Hsu, Hsu-Cheng
The Rabi-splitting energy represents the strength of light–matter interaction. This quantity is a good benchmark for evaluating the performance of light-modulation devices. Herein, we adopt ZnO microrods as microcavities for whispering gallery modes and propose a convenient method for estimating the light–matter coupling strength based on the shifts of resonant modes in temperature-dependent photoluminescence spectra from 295 to 77 K. Both temperature-dependent index dispersion and Rabi splitting can be extracted. Additionally, the Rabi-splitting energy of bulk ZnO at 0 K is estimated to be about 289 meV.

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