Investigation of hydrogen implantation-induced blistering phenomenon in Si0.7Ge0.30

The blistering phenomenon in hydrogen implanted and annealed Si0.70Ge0.30(0 0 1) layers was investigated. The implantation was performed with 240 keV H2 + ions with a fluence of 5 × 1016 cm−2. The blistering kinetics of H-implanted Si0.70Ge0.30 showed two different activation energies: about 1.60 eV in the lower temperature regime (350–425 ◦C) and 0.40 eV in the higher temperature regime (425–700 ◦C). Microstructural characterization of the implantation damage in SiGe layers using transmission electron microscopy revealed a damage band extending between 900 and 1200 nm below the surface. It was observed that after post-implantation annealing, a number of platelets and microcracks were formed within the damage band. These extended defects are predominantly oriented parallel to the surface, i.e. in the (0 0 1) plane. However, the extended defects oriented along the {1 1 1} planes were also observed and the density of these defects was the highest toward the end of the damage band. These experimental observations are compared with similar investigations in Si and Ge performed earlier and a plausible explanation for the blistering results in Si0.70Ge0.30 is presented in this work.