High cluster formation tendency in Co implanted ZnO

in: Journal of Applied Physics (2008)
Potzger, Kay; Küpper, K.; Zhou, Shengqiang; Xu, Qingyu; Schmidt, Heidemarie; Helm, Manfred; Fassbender, Jürgen
ZnO(0001) single crystals have been implant doped with a maximum of 5 at. % of Co at low temperatures. While as-implanted crystals do not show ferromagnetic properties, postimplantation annealing leads to the transformation of the implanted Co ions into small metallic clusters giving rise to a pronounced hysteresis upon magnetization reversal. The dispersed Co ions are in 2+ oxidation state. Positive magnetoresistance could be observed at low temperatures.

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