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Cryogenic ultra-low noise SiGe transitor amplifier
in: Review of Scientific Instruments (2011)
An ultra-low-noise one-stage SiGe heterojunction bipolar transistor amplifier was designed for cryogenic temperatures and a frequency range of 10 kHz-100 MHz. A noise temperature T N ≈ 1.4 K was measured at an ambient temperature of 4.2 K at frequencies between 100 kHz and 100 MHz for a source resistance of ∼ 50 Ω. The voltage gain of the amplifier was 25 dB at a power consumption of 720 µW. The input voltage noise spectral density of the amplifier is about 35 pV/ √ Hz. The low noise resistance and power consumption makes the amplifier suitable for readout of resistively shunted DC SQUID magnetometers and amplifiers.