The aim of the R&D project is the development of a broadband, universally applicable silicon nanowire layer and its integration into membrane-based MEMS chips. The Si nanowire layer is intended to create a universally applicable tool for absorption and emission that significantly improves the performance of NDIR gas sensing elements, e.g. for health technologies to determine the concentration of known gases, in terms of signal and long-term stability compared to existing systems. The applicability of the MEMS demonstrators will be tested by integrating the emitter and the developed high-detection IR sensor into an existing NDIR gas sensing cell of the project partner MHE and by evaluating their performance in comparison to the previous performance parameters.

The project is funded by AiF Berlin (ZIM) under the number ZF4006822BR9.