6814 Suchergebnisse für: „“

Electrical Control of Magnetoresistance in Highly Insulating Co-Doped ZnO

A Zn0:96Co0:04O film with low electron concentration (about 1:5 _ 1017 cm_3 at 21 K) on a highly conducting Zn0:99Al0:01O layer has been deposited on a-plane sapphire substrate by pulsed laser deposition....

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Persistent Current Reduction in Metal-Semiconductor FETs With a ZnCoO Channel in an External Magnetic Field

Transparent metal-semiconductor field-effect transistors (MESFETs) with a ZnCoO channel have been fabricated by pulsed laser deposition on c-plane sapphire substrates at a temperature of 550 °C. The paramagnetic...

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Nonvolatile Multilevel Resistive Switching in Ar+ Irradiated BiFeO3 Thin Films

Low-energy Ar+ ion irradiation has been applied to an Au/BiFeO3/Pt capacitor structure before deposition of the Au top electrode. The irradiated thin film exhibits multilevel resistive switching (RS) without...

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Single pairing spike-timing dependent plasticity in BiFeO3 memristors with a time window of 25 ms to 125 mu s

Memristive devices are popular among neuromorphic engineers for their ability to emulate forms of spike-driven synaptic plasticity by applying specific voltage and current waveforms at their two terminals....

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Plasticity in memristive devices for spiking neural networks

Memristive devices present a new device technology allowing for the realization of compact non-volatile memories. Some of them are already in the process of industrialization. Additionally, they exhibit...

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Transport properties of Ar+ irradiated resistive switching BiFeO3 thin films

BiFeO3thin films were irradiated by Ar+ ions with different fluences. The rectifying and resistive switching behaviour were retained on the Au/BiFeO3/Pt stack, and the ON/OFF ratio clearly depends on the...

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Kelvin probe force microscopy for characterizing doped semiconductors for future sensor applications in nano- and biotechnology

Kelvin probe force microscopy (KPFM) is one of the most promising non-contact electrical nanometrology techniques to characterize doped semiconductors. By applying a recently introduced explanation of...

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The Fe/ZnO(0001) interface: Formation and thermal stability

The room temperature growth mode and the interface reaction of Fe films on single crystalline ZnO(0 0 0 1) substrates prepared in ultra high vacuum (UHV) has been investigated by means of X-ray photoelectron...

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Photocapacitive light sensor based on metal-YMnO3-insulator-semiconductor structures

Technology of light sensors, due to the wide range of applications, is a dynamically developing branch of both science and industry. This work presents concept of photodetectors based on a metal-ferroelectric-insulator-semiconductor,...

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Meyer-Neldel rule in ZnO

Seventy years ago Meyer and Neldel investigated four polycrystalline n-type conducting ZnO rods [W. Meyer and H. Neldel, Z. Tech. Phys. (Leipzig) 12, 588 (1937)]. The specific conductivity increased exponentially...

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