6814 Suchergebnisse für: „“
Novel implementation of memristive systems for data encryption and obfuscation
With the rise of big data handling, new solutions are required to drive cryptographic algorithms for maintaining data security. Here, we exploit the nonvolatile, nonlinear resistance change in BiFeO3 memristors...
PublikationenInfluence of the domain size on the band gap of ordered (GaIn)P
The domain size and the band-gap energy of ordered epitaxial (GaIn)P layers have been determined by means of transmission electron microscopy and photoluminescence measurements, respectively. With decreasing...
PublikationenEnhanced field emission from lanthanum hexaboride coated multiwalled carbon nanotubes: Correlation with physical properties
Detailed results from field emission studies of lanthanum hexaboride (LaB6) coated multiwalled carbon nanotube (MWCNT) films, pristine LaB6 films, and pristine MWCNT films are reported. The films have...
PublikationenHigh cluster formation tendency in Co implanted ZnO
ZnO(0001) single crystals have been implant doped with a maximum of 5 at. % of Co at low temperatures. While as-implanted crystals do not show ferromagnetic properties, postimplantation annealing leads...
PublikationenProbing origin of room temperature ferromagnetism in Ni ion implanted ZnO films with x-ray absorption spectroscopy
We report x-ray absorption at Zn and Ni K-edges in 200 keV Ni2þ ion implanted ZnO/sapphire films. The implantation fluences are 6×1015 and 2×1016 ions/cm2, corresponding to 2% and 7% Ni in a ZnO matrix....
PublikationenSubstrate effect on the resistive switching in BiFeO3 thin films
BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions. Au was sputtered as the top electrode. The microscopic structure...
PublikationenIntense white photoluminescence emission of V-implanted zinc oxide thin films
Pulsed laser deposited ZnO films were implanted with vanadium ions using ion energies between 30 and 250 keV with different fluences yielding vanadium concentrations in the range between 0.8 and 5 at....
PublikationenHigh electron mobility of phosphorous-doped homoepitaxial ZnO thin films grown by pulsed-laser deposition
The transport properties of phosphorous-doped ZnO thin films, grown by pulsed-laser deposition on thermally pretreated hydrothermally grown ZnO single-crystal substrates, are reported. The ZnO:P thin films...
PublikationenEffect of the substrate on the insulator-metal transition of vanadium dioxide films
Single-phase vanadium dioxide films grown on (0001) sapphire and (001) silicon substrates show a very different insulator–metal electronic transition. A detailed description of the growth mechanisms...
PublikationenMagnetoresistance effects in Zn0.90Co0.10O films
Zn0.90Co0.10O films of different thicknesses (689, 408, 355 nm) doped with 0.5 at. % Al were prepared by pulsed laser deposition on a-plane sapphire substrates. At 290 K the resistivity increases drastically...
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