6814 Suchergebnisse für: „“
Hysteretic anomalous Hall effect in a ferromagnetic, Mn-rich Ge:Mn nanonet
Ferromagnetic Ge:Mn has been fabricated by Mn implantation in intrinsic Ge wafers and by pulsed laser annealing with a pulse duration of 300 ns. Due to a segregation instability during laser annealing,...
PublikationenSpectroscopic ellipsometric studies of InAs monolayers embedded in GaAs
Ellipsometric measurements of metalorganic vapor phase epitaxially grown InAs monolayers (0.5–2.0 ML) in GaAs were made at room temperature in the spectral range of the GaAs fundamental energy gap (hv=51.3–...
PublikationenCo location and valence state determination in ferromagnetic ZnO : Co thin films by atom-location-by-channeling-enhanced-microanalysis electron energy-loss spectroscopy
The Co valence state and the location of Co dopant atoms in ZnO:Co thin films revealing anomalous Hall effect below 50 K have been determined by electron energy-loss spectroscopy (EELS) measurements and...
PublikationenFerromagnetic structurally disordered ZnO implanted with Co ions
We present superparamagnetic clusters of structurally highly disordered Co–Zn–O created by high fluence Co ion implantation into ZnO _0001_ single crystals at low temperatures. This secondary phase...
PublikationenMemory effect of Mn5Ge3 nanomagnets embedded inside a Mn-diluted Ge matrix
Crystalline Mn5Ge3 nanomagnets are formed inside a Mn-diluted Ge matrix using Mn ion implantation. A temperature-dependent memory effect and slow magnetic relaxation are observed below the superparamagnetic...
PublikationenAnomalous Hall resistance in Ge:Mn systems with low Mn concentrations
Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence...
PublikationenThe importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge
In the present work, we have prepared Mn-doped Ge using different annealing approaches after Mn ion implantation, and obtained samples with hole concentrations ranging from 1018 to 2.1 × 1020 cm−3,...
PublikationenRectifying filamentary resistive switching in ion-exfoliated LiNbO3 thin films
In this letter, we report the resistive switching properties of ion-exfoliated LiNbO3 thin films. After annealing in Ar or in vacuum, electro-forming has been observed on the thin films, and the oxygen...
PublikationenReduced leakage current in BiFeO3 thin films with rectifying contacts
BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism...
PublikationenDefects in hydrothermally grown bulk ZnO
Hydrothermally grown bulk ZnO _Tokyo Denpa_ was investigated using junction-capacitance spectroscopy on silver oxide Schottky contacts (barrier height of 1.20 eV, ideality factor of 1.04). Two main shallow...
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