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Absence of ferromagnetic-transport signatures in epitaxial paramagnetic and superparamagnetic Zn0.95Co0.05O films
Paramagnetic (PM) and superparamagnetic (SPM) Zn0.95Co0.05O epitaxial films display similar temperature and magnetic field dependent anisotropic magnetoresistance (MR) effects. The high structural quality...
PublikationenHysteresis in the magnetotransport of manganese-doped germanium: Evidence for carrier-mediated ferromagnetism
We report the fabrication of Ge:Mn ferromagnetic semiconductors by Mn-ion implantation into Ge followed by pulsed laser annealing. Benefiting from the short time annealing, the hole concentration in Mn-implanted...
PublikationenQuantitative dopant profiling in semiconductors: A Kelvin probe force microscopy model
Kelvin probe force microscopy (KPFM) is used to investigate the electrostatic force between a conductive probe and nanostructured Si with shallow or buried selectively doped regions under ambient conditions....
PublikationenSpinel ferrite nanocrystals embedded inside ZnO: Magnetic, electronic, and magnetotransport properties
In this paper we show that spinel ferrite nanocrystals (NiFe2O4, and CoFe2O4) can be texturally embedded inside a ZnO matrix by ion implantation and postannealing. The two kinds of ferrites show different...
PublikationenPhotocurrent spectroscopy of deep levels in ZnO thin films
Epitaxial ZnO(0001) thin films have been grown by pulsed-laser deposition on a-Al2O3 and investigated by deep level transient spectroscopy (DLTS) and by Fourier transform infrared photocurrent (FTIR-PC)...
PublikationenInterface polarization coupling in piezoelectric-semiconductor ferroelectric heterostructures
We present a dielectric continuum model approach for studying the electrical polarization properties of interface polarization coupled BaTiO3, BaTiO3-ZnO, and ZnO-BaTiO3-ZnO thin-film structures consisting...
Publikationens-d exchange interaction induced magnetoresistance in magnetic ZnO
The magnetoresistance (MR) effect in Co-doped ZnO films prepared by pulsed laser deposition on a-plane sapphire substrates with electron concentration at 5 K ranging from 8.3×1017 cm−3 to 9.9×1019...
PublikationenElectron paramagnetic resonance of Zn1-xMnxO thin films and single crystals
X-band electron paramagnetic resonance spectra were recorded for Zn1−xMnxO films grown by pulsed laser deposition and a single crystal for comparison. For different Mn concentrations in Zn1−xMnxO films...
PublikationenBand dispersion relations of zinc-blende and wurtzite InN
The fundamental band-gap energy of the III-V compound semiconductor InN has been corrected due to recent experiments on high-quality InN samples. The advances in the InN growth technique also open new...
PublikationenMetal-insulator transition in co-doped ZnO: Magnetotransport properties
The magnetotransport properties [magnetoresistance (MR) and Hall effect] of Co-doped ZnO films prepared by pulsed laser deposition have been investigated around the metal-insulator transition _MIT_ as...
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