Band dispersion relations of zinc-blende and wurtzite InN

The fundamental band-gap energy of the III-V compound semiconductor InN has been corrected due to recent experiments on high-quality InN samples. The advances in the InN growth technique also open new possibilities to realize high-frequency field effect transistors at elevated temperatures due to the small effective mass in the InN conduction-band minimum and high optical phonon frequencies. For device simulations the correct band dispersion relations around the InN band gap are of great interest and motivate the re-examination of previous theoretical works on InN. We present the band structure on InN in the zinc-blende and wurtzitetype configuration calculated within the empirical pseudopotential method approach by exploiting the transferability of ionic model potential parameters. The modified potential parameters of In support the achieved reliability of the presented InN zinc-blende and wurtzite band structure and related properties, e.g., Luttinger and Luttinger-like k.p parameters.