6814 Suchergebnisse für: „“
Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN
The electronic properties of the zinc-blende and wurtzite group-III nitride compound semiconductors AlN, GaN, and InN are studied within the empirical pseudopotential approach. Using ionic model potentials...
PublikationenDefects in virgin and N+-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy
High-quality single crystals of ZnO in the as-grown and N+ ion-implanted states have been investigated using a combination of three experimental techniques—namely, positron lifetime/slow positron implantation...
PublikationenOrigin of magnetic moments in defective TiO2 single crystals
In this Brief Report we show that ferromagnetism can be induced in pure TiO2 single crystals by oxygen ion irradiation. By combining x-ray diffraction, Raman scattering, and electron-spin resonance spectroscopy,...
PublikationenStructural characterization of H plasma-doped ZnO single crystals by Hall measurements and photoluminescence studies
Nominally undoped, hydrothermally grown ZnO single crystals have been investigated prior to and after doping in remote H plasma. Characterizations have been made by temperaturedependent Hall effect (TDH)...
PublikationenResistive switching in unstructured, polycrystalline BiFeO3 thin films with downscaled electrodes
Kelvin probe force microscopy (KPFM) is used to investigate the electrostatic force between a conductive probe and doped semiconductors. The observed frequency dependence of the probed KPFM bias is strongly...
PublikationenKelvin probe force microscopy in the presence of intrinsic local electric fields
Kelvin probe force microscopy (KPFM) is used to investigate the electrostatic force between a conductive probe and doped semiconductors. The observed frequency dependence of the probed KPFM bias is strongly...
PublikationenOn the origin of carrier localization on two-dimensional GaN substitution layers embedded in GaAs
The electronic properties of a nitrogen atomic layer embedded in GaAs are studied by means of the empirical pseudopotential (EPP) method in a periodic modelling approach. The electronic properties of a...
PublikationenQuantitative scanning capacitance microscopy
Scanning capacitance microscopy is an analytical technique able to provide direct carrier distribution information on the nanoscale using HF amplitude detection and lock-in techniques. For the reliability...
PublikationenElectronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band
We have used deep level transient spectroscopy (DLTS) to characterize defects in ZnO grown by pulsed-laser deposition (PLD). Using high resolution Laplace DLTS, we found that at the high temperature side...
PublikationenMn-implanted, polycrystalline indium tin oxide and indium oxide films
Polycrystalline conducting, ca. 250 nm thick indium tin oxide (ITO) and indium oxide (IO) films grown on SiO2/Si substrates using reactive magnetron sputtering, have been implanted with 1 and 5 at.% of...
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