N-p heterojunctions have been the focus of research due to their broad range of applications. We studied the transport properties in Co-doped ZnO/YMnO3 n-p heterojunctions. Samples were grown at two different numbers of laser pulses and at different at. % Co concentration. Current-voltage characterization showed diode behavior, along with dependence of electrical properties on growth parameters and Co doping concentration. In fact, samples grown at 2500 laser pulses at 2.0 and 5.0 atom percent exhibited hysteretic and asymmetric I-V curves, indicating a possible resistive switching effect with a relation between lowresistance state and high-resistance state of around 9.8.