The crystalline germanium nanostructures were obtained on silicon surface by chemical vapor deposition technique using a germanium (IV) iso-propoxide ([Ge(OiPr)4]) metalorganic precursor as a germanium source. As was observed, the one-dimensional germanium nanostructures on silicon surface forms without using metal catalyst that means that the formation of one-dimensional nanostructures is based not on vapor-liquid-solid (VLS) growth mechanism, but on self-organization processes which take place on the silicon surfaces during the CVD process of germanium iso-propoxide pyrolysis. Our observation suggests that non-catalytic growth of germanium nanocolumns is strongly depending on CVD process temperature. Germanium phase composition and morphology have been investigated by X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectroscopy (XPS), and High Resolution Scanning Electron Microscopy (HRSEM), respectively. Our results provide the new way for the growing of one dimensional germanium nanostructures, without contamination by catalyst as known from vapor-liquid-solid growth mechanism that allows applying such materials in micro- and optoelectronics.