We present recent results on multicrystalline silicon thin film solar cells on glass substrates with absorbers based on a liquid phase diode laser crystallization process resulting in grains up to 1 mm in size. Different types of emitters are employed. Based on a second laser crystallization process using pulsed excimer laser irradiation, a homoemitter is generated from amorphous silicon by liquid phase epitaxy. The resulting mesa cells yield an efficiency of 7.8% with open circuit voltages VOC of 545 mV and short circuit current densities JSC of 23.5 mA/cm². Furthermore, we applied an a-Si heteroemitter to the laser crystallized absorber. On planar substrates similar JSC and VOC as compared to the homojunction were reached. By using nanowire structured absorbers, JSC increases by 20% resulting in an efficiency of 8.7%.