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- Ellipsometry on monolayer films of InAs and AlAs embedded in GaAs and of InP embedded in GaP
Ellipsometry on monolayer films of InAs and AlAs embedded in GaAs and of InP embedded in GaP
in: Thin Solid Films (1998)
Ellipsometric measurements have been made at room temperature on MOVPE-grown InAs monolayers (M). (0.5-1 ML) and AlAs MLs (1 to 12 ML) in GaAs around the GaAs fundamental gap E0(GaAs) and on MOVPE-grown InP MLs (0.5-1 ML) in GaP around the GaP direct gap. Due to the introduction of monolayer films, the optical properties of the host material are strongly modified as a function of the monolayer material and thickness and as a function of the substrate misorientation. The perfection of the steplike monolayerrhost material interfaces has been examined by high-resolution transmission electron microscopy (HRTEM). To our knowledge the modifications of the optical properties of the system InP in GaP have been observed only by ellipsometric measurements.