Single-electron transitions in one-dimensional native nanostructures

Low-temperature measurements proved the existence of a two-dimensional electron gas on defined dislocation arrays in silicon. As a consequence, single-electron transitions (Cou-lomb blockades) are observed. It is shown that the high strain on dislocation cores modifies the band structure and results in the formation of quantum wells along dislocation lines. This causes quantization of energy levels inducing the formation of Coulomb blockades.