Optimization of magneto-resistive response of ion-irradiated exchange biased films through zigzag arrangement of magnetization

Exchange coupled ferromagnetic-antiferromagnetic Ni81Fe19/Ir23Mn77 films with a zigzag alignment of magnetization are prepared by local ion irradiation. The anisotropic magneto-resistive behavior of the magnetic thin film structures is correlated to the magnetic structure and modeled. A unique uniaxial field sensitivity along the net magnetization alignment is obtained through the orthogonally modulated and magnetic domain wall stabilized magnetic ground state. Controlling local thin film magnetization distributions and, thus, the overall magnetization response opens unique ways to tailor the magneto-resistive sensitivity of functional magnetic thin film devices.