Electron backscatter diffraction on femtosecond laser sulfur hyperdoped silicon

This paper analyzes the impact of femtosecond laser pulse irradiation on the crystallinity of silicon wafers by means of electron backscatter diffraction (EBSD) measurements. EBSD based orientation imaging microscopy maps and image quality maps are correlated to the grade of the silicon crystallinity. We analyze the impact of accumulated net laser irradiation originating from a laser spot overlap that is necessary to process large areas, e.g. for sulfur doping of semiconductor devices. Furthermore, we demonstrate that post processing annealing recovers crystallinity and therefore allows fs-laser processed silicon to be used in semiconductor device manufacturing.