The project invests in state-of-the-art atomic layer deposition (ALD) technology for the fabrication of dielectric, semiconducting, and conductive thin films. This technology enables precise control of film thickness in the sub-nanometer range, thereby significantly improving the precision of material properties.

When combined with bias technology, the optical and electrical properties of the thin films can be specifically tailored. This makes it possible to meet a wide range of requirements and to precisely adapt material properties to the intended design specifications.

A key advantage of the technology lies in the acceleration of process development. Precise layer control and automated workflows theoretically enable a reduction in development times by a factor of 100. This opens up new opportunities for research and industrial applications where both material quality and efficiency are critical.

The project is funded by the Free State of Thuringia under grant number 2025 FGI 0024 and co-financed by the European Union through the European Regional Development Fund (ERDF).

Logo des Ministeriums für Bildung, Wissenschaft und Kultur
Banner Logo for Projects Co-Funded by the EU