Spectroscopic ellipsometric studies of InAs monolayers embedded in GaAs

in: Applied Physics Letters (1997)
Rheinländer, B.; Schmidt, Heidemarie; Gottschalch, Volker
Ellipsometric measurements of metalorganic vapor phase epitaxially grown InAs monolayers (0.5–2.0 ML) in GaAs were made at room temperature in the spectral range of the GaAs fundamental energy gap (hv=51.3– 1.5 eV). Due to the introduction of InAs single-, double-, and multilayers, the optical properties of the GaAs host material are strongly modified, depending on the number and thickness of the InAs layers.

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