A structure consisting of a nanoporous dielectric film (SiO2) containing alternated layers of metal (Cu/Ni) in the pores on a semiconductor substrate (n-Si) has been formed using the swift heavy ion track technology. Investigations of electrical-physical and galvanomagnetic characteristics of this structure have made it possible to determine conduction mechanisms dominating in different temperature regions. A positive magnetoresistance was detected in temperature ranges of 200-300 К and lower than 50 К, reaching 30 % and 1000 % , correspondingly. The carried out examinations have shown an exploitability of Si/SiO2/(Cu/Ni) structures as sensitive elements of magnetic field sensors.