Growth of axial SiGe heterojunctions in nanowires using PLD

in: Nanotechnology (2011)
Eisenhawer, Björn; Sivakov, Vladimir; Berger, Andreas; Christiansen, Silke
Axial heterojunctions between pure silicon and pure germanium in nanowires have been realized combining pulsed laser deposition, chemical vapor deposition and electron beam evaporation in a vapor-liquid-solid nanowire growth experiment using gold nanoparticles as catalyst for the 1D wire growth. Energy dispersive x-ray mappings and line scans show a compositional transition from pure silicon to pure germanium and vice versa with exponential and thus comparably sharp transition slopes. Based on these results not only Si-Ge heterojunctions seem to be possible using the vapor-liquid-solid growth process but also heterojunctions in optoelectronic III-V compounds such as InGaAs/GaAs or group- III nitrid compounds such as InGaN/GaN as well as axial p-n- junctions in Si nanowires.

DOI: Array

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