Axial p-n Junctions Realized in Silicon Nanowires by Ion Implantation

in: Nano Letters (2009)
Hoffmann, S.; Bauer, Jan; Ronning, Carsten; Michler, Johann; Ballif, Christophe; Sivakov, Vladimir; Christiansen, Silke; Stelzner, Thomas
The electrical properties of vertically aligned silicon nanowires doped by ion implantation are studied in this paper by a combination of electron beam-induced current imaging and two terminal current-voltage measurements. By varying the implantation parameters in several process steps, uniform p- and n-doping profiles as well as p-n junctions along the nanowire axis are realized. The effective doping is demonstrated by electron beam-induced current imaging on single nanowires, and current-voltage measurements show their well-defined rectifying behavior.

Third party cookies & scripts

This site uses cookies. For optimal performance, smooth social media and promotional use, it is recommended that you agree to third party cookies and scripts. This may involve sharing information about your use of the third-party social media, advertising and analytics website.
For more information, see privacy policy and imprint.
Which cookies & scripts and the associated processing of your personal data do you agree with?

You can change your preferences anytime by visiting privacy policy.