The properties of (n)a-Si:H/(p)c-Si heterojunction solar cells based on wet chemically etched silicon nanowires with different architectures are explored. Heterojunction solar cell based on silicon nanostructures were fabricated using silver (Ag) wet assisted chemical etching of bulk p-type silicon wafers of (100) and (111) orientation followed by plasma enhanced chemical vapor deposition of (n)a-Si:H layers. Silicon nanowires obtained with (100) substrate are vertical while for (111) substrate nanowires are 45° inclined. The inclined nanowires demonstrate stronger light trapping effect in comparison with vertically aligned SiNWs, which leads to enhanced external quantum efficiency in comparison with planar. However the solar cell performance is still limited by the recombination losses at the silicon nanowire surface.