Carrier Mobility in Semiconductors at Very Low Temperatures †

in: Engineering Proceedings (2021)
Tobehn-Steinhäuser, Ingo; Reiche, Manfred; Schmelz, Matthias; Stolz, Ronny; Fröhlich, Thomas; Ortlepp, Thomas
Carrier mobilities and concentrations were measured for different p- and n-type silicon materials in the temperature range 0.3–300 K. Simulations show that experimentally determined carrier mobilities are best described in this temperature range by Klaassen’s model. Freeze-out reduces the carrier concentration with decreasing temperature. Freeze-out, however, depends on the dopant type and initial concentration. Semi-classical calculations are useful only for temperatures above 100 K. Otherwise quantum mechanical calculations are required.

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