We present a technology for preparing multi¬crystalline silicon thin film solar cells based on laser crystalliz¬ation. The technology makes use of high rate electron beam evap¬oration of amorphous silicon and of liquid phase crystallization by scanning the beam of a line focus high power diode laser. The resulting several µm thick absorber of the solar cell consists of grains sized up to mm. On top of the absorber an epitaxial emitter is prepared by excimer laser crystallization. Our solar cells reach¬ed an open circuit voltage of 550 mV and an efficiency of 7.8 %.