Liquid-phase crystallized silicon on glass (LPCSG) presents a promising material to fabricate high quality silicon thin films, e.g. for solar cells and modules. On the glass substrate at first barrier layers and then a doped amorphous silicon layer are deposited followed by crystallization with a line focus laser beam. In this paper we introduce injection level dependent lifetime measurements generated by the quasi steady-state photoconductance decay method (QSSPC) to characterize LPCSG absorbers. This contactless method allows a determination of the LPCSG absorber quality already at an early stage of solar cell fabrication, and provides a monitoring of the absorber quality during the solar cell fabrication steps. We found minority carrier lifetimes higher than 200 ns in our layers (e.g. n-type absorber with ND=2x1015cm-3) indicating a surface recombination velocity SBL<3000 cm/s at the barrier layer/Si interface.