Diode laser-crystallization for the formation of passivating contacts for solar cells

in: Physica Status Solidi-Rapid Research Letters (2022)
Gawlik, Annett; Glatthaar, Raphael; Dellith, Andrea; Jia, Guobin; Dellith, Jan; Terheiden, Barbara; Plentz, Jonathan
A new method of diode laser treatment of passivating contacts for solar cells application based on electron beam evaporated highly doped amorphous silicon (a-Si) layers deposited on solar-grade Czochralski wafers with SiOx tunnelling layers is investigated. In a first step, an interface oxide is grown and a highly doped n-type a-Si layer is deposited on both sides by electron beam evaporation. In a next step, the laser treatment is applied. Two different scanning speeds of 15 and 20mms_1 are used. Electron backscattering diffraction and quasi-steadystate photo conductance measurements indicate that the a-Si layer can be crystallized without breaking up the thin oxide layer. To determine the best parameters, the lifetime and the implied open-circuit voltage for each laser power are measured. The first results show a fitted lifetime of 4.06ms and an implied open-circuit voltage up to 711 mV after a passivation step.

Third party cookies & scripts

This site uses cookies. For optimal performance, smooth social media and promotional use, it is recommended that you agree to third party cookies and scripts. This may involve sharing information about your use of the third-party social media, advertising and analytics website.
For more information, see privacy policy and imprint.
Which cookies & scripts and the associated processing of your personal data do you agree with?

You can change your preferences anytime by visiting privacy policy.