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- Raman scattering and photoluminescence in silicon nanowire ensembles
Raman scattering and photoluminescence in silicon nanowire ensembles
in: Proceedings PSST-2012 (2012)
Arrays of silicon (Si) nanowires with mean diameters of about 50–100 nm formed by wet-chemical
etching of crystalline silicon wafers with low and high doping levels were investigated by means of
photoluminescence and Raman spectroscopy. The photoluminescence bands in the spectral ranges
of 650–900 nm and about 1100 nm were detected and explained by the radiative recombination of
excitons confined in Si nanocrystals on the surface of Si nanowires and by the interband photoluminescence
in the volume of Si nanowires, respectively. The intensities of the band-gap related
photoluminescence and Raman scattering under excitation at 1064 nm were significantly larger
for the Si nanowire samples in comparison with that for the crystalline Si substrates. This fact is
explained by strong scattering of the excitation light, which results in partial light trapping in silicon
nanowire arrays. The doping level and surface orientation of the substrate were found to influence
the photoluminescence and Raman scattering in Si nanowire arrays.
DOI: Array