In this paper, we report the magnetic and electrical properties of Mn implanted nearly intrinsic Si wafers after sub second thermal treatment. Activation of acceptors is realized in pulsed laser annealing (PLA) films with a free hole concentration of 6.29 × 1020 cm−3 while the sample annealed by rapid thermal annealing (RTA) shows n-type conductivity with a much smaller free electron concentration in the order of 1015 cm−3. Ferromagnetism is probed for all films by a SQUID magnetometer at low temperatures. The formation of ferromagnetic MnSi1.7nanoparticles which was proven in RTA films can be excluded in Mn implanted Si annealed by PLA.