Polycrystalline silicon thin film solar cell layer systems on glass were prepared in a two-step process based on first generating a seed layer by diode laser crystallization followed by epitaxial thickening. This latter step also was performed via the melt by diode laser treatment, partly after a solid phase furnace annealing step. The laser parameters required for epitaxy were determined. The crystal structure was investigated by EBSD. 1 µm thick solar cells without RTA treatment, without hydrogen passivation, and without light trapping delivered a maximum open circuit voltage of 240 mV and a maximum short circuit current of 8 mA/cm².